Study The Structural Properties of Flashed GaAs Films

Abstract

A polycrystalline GaAs thin films have been prepared by flash evaporation technique on glass substrate with Thickness ~ 1 µm and substrate temperature (Ts) of about 423 K under vacuum of about 10⁻⁵ mbar. The thin films were treated at different annealing temperatures 423, 473, 523, 573 K for 2 hours. The structural tests showed that GaAs have The main planes of the GaAs alloy (111), (220) and (311) as reflections at Bragg angles 27.24°, 45° and 53.3° respectively, and coincide exactly with that of ASTM cards.