Studying the effect of addition ($\text{O}_2\text{/Ar}$) on the electrical properties of plasma glow discharge

Abstract

Containing oxygen plasma for many important applications in the semiconductor industry when adding a small amount of oxygen, can vary significantly properties of the plasma. In this work, the characteristics of the current-voltage characteristics and the failure potential in different percentages of $\text{O}_2$ in the gas composition ($\text{Ar / O}_2$) are measured. The result showed that the addition of oxygen leads to a decrease in the discharge current at the same discharge voltage and gas pressure. On the contrary, the low failure potential in percent less than $\text{O}_2$ of the minimum failure voltage (600, 650, 730, 750, 760, 780) and (5%, 10%, 15%, 20%, 30%, 50%) of $\text{O}_2$ percentage, respectively. Plasma detection using optical spectroscopy showed that two different plasma electron groups are characterized by different temperatures and densities, so increasing the electron temperature by adding $\text{O}_2$. While the electron density decreases with increase in the $\text{O}_2$ ratio.