Effect of Electromagnetic Radiation at Vs, IR, UV on the Properties of Ordinary Si Diode with an Exposed Device

Abstract

The effect of electromagnetic radiation on the properties of ordinary Si diode with exposed device, studied in was the framework of using visible light sources (VS), of wavelength (630-650nm), wavelength (532±10nm) and wavelength (405nm), i.e. red laser, green laser and blue-violet laser, respectively. As well as ultraviolet (UV) and infrared (IR), where sources with wavelengths (395nm) (850 nm) were used, respectively. As well as to using transistor (2N3773) as diode, by using base and emitter pins. Then we calculate and scheme the V-I instate forward bias characteristic curve for the diode in two states with and without the effect of radiation, and compared between them. Where we getted to barrier potential is equal to (13.548 V) for exposed diode device without effect for electromagnetic radiation where (12.885 V), (12.626 V), (11.818 V), (13.425 V) and (13.366 V). The first three values are for visible light, the fourth value for ultraviolet radiation, and the fifth value for Infrared radiation, According to the order of wavelengths above. The frontal resistance was also calculated from the curve for the knee region, and the regions before and after the knee.