Numerical analysis of heterojunction AlGaAs/ InP thin film solar cell

Abstract

High efficiency solar cells are the aim sought by the efforts of researchers due to obtain a clean energy that can face climate changes. In this research a solar cell was designed that contains There are four layers a window layer emitter layer absorber layer and back surface filed layer. The PC1D software was used to simulate the solar cell. Where the effect of thickness and the concentration of doping of window layer was studied within the range $(0-1)\ \mu\text{m}$, $(10^{17}-10^{20})\ \text{cm}^{-3}$, respectively, also the concentration of impurities and value of thickness movables on I-V characteristic of solar cell, and output parameters like Isc, Voc and $\eta$. It recorded the best efficiency 30.1 % at thickness and doping concentration, $0.02\mu\text{m}$ and $1.39 \times 10^{20}\ \text{cm}^{-3}$, respectively. The consequence of both of the thickness value and the impurities concentration of the absorbs layer within the area $(0-5)\ \mu\text{m}$ and $10^{15}\text{cm}^{-3}$ to $10^{20}\text{cm}^{-3}$, respectively, was also studied. The best values for thickness and doping level were $1.837\mu\text{m}$, and $6.87 \times 10^{15}\ \text{cm}^{-3}$, respectively.